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| NTD30N02 Power MOSFET 30 Amps, 24 Volts N-Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Typical Applications http://onsemi.com * * * * Power Supplies Converters Power Motor Controls Bridge Circuits 30 AMPERES 24 VOLTS RDS(on) = 11.2 mW (Typ.) N-Channel D Value 24 "20 30 100 75 -55 to 150 50 Unit Vdc Vdc Adc ID IDM PD TJ, Tstg EAS Apk W C mJ 12 3 C/W RJC RJA RJA TL 1.65 67 120 260 C D30N02 Y WW DPAK CASE 369C (Surface Mount) Style 2 4 S G MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Drain-to-Source Voltage Gate-to-Source Voltage - Continuous Drain Current - Continuous @ TA = 25C - Single Pulse (tpv10 s) Total Power Dissipation @ TA = 25C Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy - Starting TJ = 25C (VDD = 24 Vdc, VGS = 10 Vdc, L = 1.0 mH, IL(pk) = 10 A, RG = 25 ) Thermal Resistance - Junction-to-Case - Junction-to-Ambient (Note 1) - Junction-to-Ambient (Note 2) Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds Symbol VDSS VGS MARKING DIAGRAM 4 Drain YWW D30 N02 2 1 Drain 3 Gate Source = Device Code = Year = Work Week Shipping 75 Units/Rail 2500 Tape & Reel DPAK DPAK Publication Order Number: NTD30N02/D 1. When surface mounted to an FR4 board using 1 pad size, (Cu Area 1.127 in2). 2. When surface mounted to an FR4 board using minimum recommended pad size, (Cu Area 0.412 in2). ORDERING INFORMATION Device NTD30N02 NTD30N02T4 Package For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2004 1 March, 2004 - Rev. 2 NTD30N02 ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (Note 3) (VGS = 0 Vdc, ID = 250 Adc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (VDS = 20 Vdc, VGS = 0 Vdc) (VDS = 24 Vdc, VGS = 0 Vdc) (VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125C) Gate-Body Leakage Current (VGS = 20 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS (Note 3) Gate Threshold Voltage (Note 3) (VDS = VGS, ID = 250 Adc) Threshold Temperature Coefficient (Negative) Static Drain-to-Source On-Resistance (Note 3) (VGS = 10 Vdc, ID = 30 Adc) (VGS = 10 Vdc, ID = 20 Adc) (VGS = 4.5 Vdc, ID = 15 Adc) Forward Transconductance (Note 3) (VDS = 10 Vdc, ID = 15 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (Note 4) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge (VDS = 20 Vdc, ID = 30 Adc, Vd Ad VGS = 4.5 Vdc) (Note 3) SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage (IS = 15 Adc, VGS = 0 Vdc) (IS = 30 Adc, VGS = 0 Vdc) (Note 3) (IS = 15 Adc, VGS = 0 Vdc, TJ = 125C) (IS = 30 Adc, VGS = 0 Vdc, Ad Vd dIS/dt = 100 A/s) (Note 3) Reverse Recovery Stored Charge 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 4. Switching characteristics are independent of operating junction temperatures. VSD - - - - - - - 0.95 1.10 0.80 30 14.5 15.5 0.013 1.2 - - - - - - mC Vdc (VDD = 20 Vdc, ID = 15 Adc, VGS = 4.5 Vdc, RG = 2.5 ) (VDD = 20 Vdc, ID = 30 Adc, VGS = 10 Vdc, RG = 2.5 ) td(on) tr td(off) tf td(on) tr td(off) tf QT Q1 Q2 - - - - - - - - - - - 7.0 28 22 12 12.5 115 15 17 14.4 4.0 8.5 15 55 35 20 - - - - 20 - - nC ns ns (VDS = 20 Vdc, VGS = 0 Vdc, Vd Vd f = 1.0 MHz) Ciss Coss Crss - - - 1000 425 175 - - - pF VGS(th) 1.0 - RDS(on) - - - gFS - - 11.2 20 20 14.5 14.5 24 - mhos 2.1 -4.1 3.0 - Vdc mV/C mW V(BR)DSS 24 - IDSS - - - IGSS - - - - - 0.8 1.0 10 100 nAdc 26.5 25.5 - - Vdc mV/C mAdc Symbol Min Typ Max Unit Reverse Recovery Time trr ta tb QRR ns http://onsemi.com 2 NTD30N02 60 VGS = 9 V ID, DRAIN CURRENT (AMPS) 50 40 30 20 3.4 V 10 3V 0 0 1 2 3 4 5 6 7 8 3.6 V 5.4 V 8V 7V 6V TJ = 25C 4.6 V 4.2 V 4V 5V ID, DRAIN CURRENT (AMPS) 60 VDS 10 V 50 40 30 20 10 0 1 TJ = 25C TJ = 100C TJ = -55C 2 3 4 5 6 7 8 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 1. On-Region Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE () RDS(on), DRAIN-TO-SOURCE RESISTANCE () Figure 2. Transfer Characteristics 0.04 ID = 15 A TJ = 25C 0.03 0.07 TJ = 25C 0.06 0.05 0.04 0.03 0.02 0.01 10 VGS = 10 V VGS = 4.5 V 0.02 0.01 0 2 3 4 5 6 7 8 9 10 20 30 40 50 60 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPS) Figure 3. On-Resistance versus Gate-to-Source Voltage RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 1.6 ID = 15 A VGS = 10 V IDSS, LEAKAGE (nA) 10 100 Figure 4. On-Resistance versus Drain Current and Gate Voltage VGS = 0 V TJ = 150C 1.4 1.2 1 1 0.8 0.1 TJ = 100C 0.6 -50 -25 0 25 50 75 100 125 150 0.01 4 8 12 16 20 24 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) TJ, JUNCTION TEMPERATURE (C) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current versus Voltage http://onsemi.com 3 NTD30N02 2500 Ciss Crss VDS = 0 V VGS = 0 V TJ = 25C C, CAPACITANCE (pF) 2000 1500 Ciss 1000 500 0 10 Coss Crss 5 VGS 0 VDS 5 10 15 20 25 GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 1000 VDS = 20 V ID = 30 A VGS = 10 V t, TIME (ns) 100 tf tr 10 td(on) td(off) 5 VDS QT 20 4 Q1 3 Q2 VGS 16 12 2 ID = 30 A VDS = 20 V VGS = 4.5 V TJ = 25C 0 8 12 QG, TOTAL GATE CHARGE (nC) 4 16 8 1 0 4 0 1 1 10 RG, GATE RESISTANCE () 100 Figure 8. Gate-to-Source and Drain-to-Source Voltage versus Total Charge Figure 9. Resistive Switching Time Variation versus Gate Resistance DRAIN-TO-SOURCE DIODE CHARACTERISTICS 15 IS, SOURCE CURRENT (AMPS) VGS = 0 V TJ = 25C 12 9 6 3 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Figure 10. Diode Forward Voltage versus Current http://onsemi.com 4 NTD30N02 PACKAGE DIMENSIONS DPAK CASE 369C-01 ISSUE O -T- B V R 4 SEATING PLANE C E DIM A B C D E F G H J K L R S U V Z INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.180 0.215 0.025 0.040 0.020 --- 0.035 0.050 0.155 --- MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.57 5.45 0.63 1.01 0.51 --- 0.89 1.27 3.93 --- A S 1 2 3 Z U K F L D G 2 PL J H 0.13 (0.005) M T STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.101 5.80 0.228 1.6 0.063 6.172 0.243 3.0 0.118 SCALE 3:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 NTD30N02 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 6 NTD30N02/D |
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